Key milestones in GaN RF technology include unveiling the first Ka-band GaN MMIC power amplifier at the 2004 IEEE International Microwave Symposium, the first W-band GaN MMIC power amplifier at the ...

Migrating to the unlicensed visible light spectrum, which spans 400 THz to 800 THz, accesses a vast bandwidth, enabling VLC ...

Underpinning all this progress is the work of Hiroshi Amano and his colleagues, who made a pivotal breakthrough in GaN ...

While CMOS may be synonymous with the manufacture of silicon ICs, it’s a versatile process can also be applied to the ...

Wise Integration, a French pioneer in digital control for GaN and GaN IC-based power supplies, has released its first fully ...

Three leading players in semiconductor research and development – the Leibniz Institute for Crystal Growth (IKZ), the PVA ...

EV Group (EVG), a provider of semiconductor integration and process solutions, has topped the rankings in the 2025 ...

AlGaN strain strategies For AlGaN UV LEDs, which are typically grown on AlN templates, AlGaN strain-modulation strategies aim to mitigate the compressive stress. This can be realised by adjusting the ...

The team used a modified commercial cryogenic hybrid LNA based on InP HEMTs characterised to demonstrate the feasibility of ...

PDI is an internationally recognised research institute with more than 30 years of expertise in MBE and semiconductor ...

Compound Semiconductor™ is an Angel Business Communications publication.

Fraunhofer ISIT’s Power Electronics division (which develops prototypes for power electronic and sensor systems) will use ...